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Title: Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility

Amorphous zinc-indium-tin oxide (a-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on complete miscibility of In and Sn contents. The a-ZITO TFTs were comparatively studied in detail, especially for the working stability. The a-ZITO TFTs all exhibited acceptable and excellent behaviors from Sn-free TFTs to In-free TFTs. The obtained a-ZTO TFTs presented a field-effect mobility of 1.20 cm{sup 2} V{sup −1} s{sup −1}, an on/off current ratio of 4.89 × 10{sup 6}, and a long-term stability under positive bias stress, which are comparable with those of the a-ZIO TFTs. The In-free a-ZTO TFTs are very potential for electrical applications with a low cost.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
  2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072 (China)
Publication Date:
OSTI Identifier:
22350799
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CARRIER MOBILITY; COMBUSTION; INDIUM OXIDES; SOLUBILITY; STABILITY; THIN FILMS; TIN OXIDES; TRANSISTORS; ZINC OXIDES