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Title: Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces

We report a study of the effects of charge transfer on electrical properties of CdO/SnTe heterostructures. A series of structures with variable SnTe thicknesses were deposited by RF magnetron sputtering. Because of an extreme type III band offset with the valence band edge of SnTe located at 1.5‚ÄČeV above the conduction band edge of CdO, a large charge transfer is expected at the interface of the CdO/SnTe heterostructure. The electrical properties of the heterostructures are analyzed using a multilayer charge transport model. The analysis indicates a large 4-fold enhancement of the CdO electron mobility at the interface with SnTe. The mobility enhancement is attributed to reduction of the charge center scattering through neutralization of the donor-like defects responsible for the Fermi level pinning at the CdO/SnTe interface.
Authors:
 [1] ;  [2] ; ;  [3]
  1. Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)
  2. (United States)
  3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22350797
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM OXIDES; CHARGE TRANSPORT; DEFECTS; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; EV RANGE; FERMI LEVEL; INTERFACES; LAYERS; MAGNETRONS; REDUCTION; SCATTERING; THICKNESS; TIN TELLURIDES; VALENCE