skip to main content

SciTech ConnectSciTech Connect

Title: Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ν of 1 and 2. This indicates that the large values of the g-factor (about 30–40) remain unchanged at very strong magnetic fields.
Authors:
;  [1] ;  [2] ; ;  [1] ;  [3] ;  [4] ;  [5] ;  [4] ;  [5]
  1. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
  3. Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg (Germany)
  4. LNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, F-38042 Grenoble cedex 9 (France)
  5. (France)
Publication Date:
OSTI Identifier:
22350796
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; FERMIONS; HALL EFFECT; LANDE FACTOR; MAGNETIC FIELDS; MERCURY TELLURIDES; QUANTUM WELLS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TWO-DIMENSIONAL CALCULATIONS