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Title: Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [3] ;  [6]
  1. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)
  2. Oak Ridge Institute for Science and Education, Research Participation Program, U.S. Army Aviation and Missile Research, Development and Engineering Center (AMRDEC), Redstone Arsenal, Alabama 35898 (United States)
  3. Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States)
  4. Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States)
  5. Plasma Chemistry Research Center-CNR, via Orabona, 4-70126 Bari (Italy)
  6. (United States)
Publication Date:
OSTI Identifier:
22350795
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALUMINIUM COMPOUNDS; CARRIERS; CHEMICAL VAPOR DEPOSITION; FILMS; GALLIUM NITRIDES; INDIUM COMPOUNDS; MICROSTRUCTURE; MODULATION; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA; TEMPERATURE RANGE 0273-0400 K