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Title: Determination of heterojunction band offsets between CdS bulk and PbS quantum dots using photoelectron spectroscopy

Photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (ΔE{sub V}) of a CdS/PbS quantum dot (QD) heterojunction for which the PbS QD layer was deposited using solution based layer-by-layer dip coating method on top of RF magnetron sputtered CdS. A value of ΔE{sub V} = 1.73 eV was obtained using the Cd 3d and Pb 4f energy levels as references. Given the band gap energies of the CdS and PbS-QD layers, the conduction band offset ΔE{sub C} was determined to be 0.71 eV.
Authors:
; ;  [1] ;  [2] ;  [2] ;  [3]
  1. Department of Physics and Astronomy, The University of Toledo, 2801W. Bancroft Street, Mail Stop 111, Toledo, Ohio 43606 (United States)
  2. Department of Nanomechatronics, Korea University of Science and Technology, Daejeon 305-350 (Korea, Republic of)
  3. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22350786
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CADMIUM SULFIDES; EV RANGE; HETEROJUNCTIONS; LAYERS; LEAD SULFIDES; MAGNETRONS; PHOTOELECTRON SPECTROSCOPY; QUANTUM DOTS; SPUTTERING; VALENCE