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Title: Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum “trough” generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [2]
  1. Université Grenoble Alpes, 38000 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22350778
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALUMINIUM COMPOUNDS; ELECTRIC FIELDS; GALLIUM NITRIDES; LAYERS; POLARIZATION; QUANTUM WELLS; THZ RANGE; TUNNEL EFFECT