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Title: Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.
Authors:
; ; ; ; ;  [1]
  1. Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22350773
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABUNDANCE; CARRIERS; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; P-N JUNCTIONS; QUANTUM WELLS; REDUCTION; SOLAR CELLS; TRAPPING; VISIBLE RADIATION