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Title: Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.
Authors:
;  [1] ;  [2] ;  [3]
  1. Division of Physics, Indian Institute of Science Education and Research, Pune 411008, Maharashtra (India)
  2. Nottingham Nanotechnology and Nanoscience Centre, School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  3. The National Center of Nanotechnology, KACST, Riyadh 11442 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22350767
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; FREQUENCY DEPENDENCE; INJECTION; JUNCTION DIODES; LIGHT EMITTING DIODES; SEMICONDUCTOR MATERIALS; VISIBLE RADIATION