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Title: Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki út 8, H-1111 Budapest (Hungary)
  2. MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege út 29-33, H-1121 Budapest (Hungary)
Publication Date:
OSTI Identifier:
22350763
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; FILMS; GRAPHENE; MOBILITY; NANOSTRUCTURES; SILICON; SILICON NITRIDES; SILICON OXIDES; STABILITY; STOICHIOMETRY; THICKNESS