Solution-processed amorphous silicon surface passivation layers
- Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, D-12489 Berlin (Germany)
- Evonik Industries AG, Creavis Technologies and Innovation, Paul-Baumann-Straße 1, D-45772 Marl (Germany)
Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.
- OSTI ID:
- 22350752
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hydrogenation Mechanisms of Poly-Si/SiOx Passivating Contacts by Different Capping Layers
Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy