skip to main content

SciTech ConnectSciTech Connect

Title: Solution-processed amorphous silicon surface passivation layers

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, D-12489 Berlin (Germany)
  2. Evonik Industries AG, Creavis Technologies and Innovation, Paul-Baumann-Straße 1, D-45772 Marl (Germany)
Publication Date:
OSTI Identifier:
22350752
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; INJECTION; LAYERS; LIFETIME; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SILICON; SURFACES; THIN FILMS; X RADIATION