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Title: Excitonic localization in AlN-rich Al{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N multi-quantum-well grain boundaries

AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.
Authors:
;  [1] ; ;  [2] ; ;  [3]
  1. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal Saudi Arabia (Saudi Arabia)
  2. Department of Physics, SUPA, University of Strathclyde, Glasgow, Scotland (United Kingdom)
  3. R and D Center for Semiconductor Lighting, Chinese Academy of Science, Beijing (China)
Publication Date:
OSTI Identifier:
22350750
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; GRAIN BOUNDARIES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS