skip to main content

SciTech ConnectSciTech Connect

Title: Microstructural, optical, and electrical properties of Ni–Al co-doped ZnO films prepared by DC magnetron sputtering

Graphical abstract: - Highlights: • Ni–Al co-doped ZnO (NiAl:ZnO) composite thin films were deposited by DC magnetron sputtering at room temperature. • All films showed a highly preferential (0 0 2) c-axis orientation. • XPS revealed the presence of metallic Ni, NiO, and Ni{sub 2}O{sub 3} states, and Ni atoms were successfully doped in the NiAl:ZnO films. • NiAl:ZnO (3 wt% Ni) film showed the lowest electrical resistivity of 2.59 × 10{sup −3} Ω cm. • Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni. - Abstract: Ni–Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni{sub 2}O{sub 3} states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10{sup −3} Ω cm at a Ni doping concentration of 3 wt%more » compared with undoped Al-doped ZnO film (5.58 × 10{sup −3} Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein–Moss shift due to the increase of carrier concentration.« less
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [4]
  1. National Core Research Center for Hybrid Materials Solution, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)
  2. Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)
  3. Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22348613
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 51; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; DEPOSITS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EV RANGE; MAGNETRONS; MICROSTRUCTURE; OPTICAL PROPERTIES; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES