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Title: Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties

Highlights: • ITO nanowires were grown by e-beam evaporation method. • ITO nanowires growth done at low substrate temperature of 350 °C. • Nanowires growth was carried out without use of catalyst and reactive oxygen gas. • Nanowires growth proceeds via self catalytic VLS growth. • Grown nanowires have diameter 10–20 nm and length 1–4 μm long. • ITO nanowire films have shown good antireflection property. - Abstract: We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250–400 °C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (∼10–15 nm) and micron long ITO NWs growth was observed in a temperature window of 300–400 °C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300–400 °C have shown ∼2–6% reflection and ∼70–85% transmission in the visible region. Effect of deposition parametersmore » was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices.« less
Authors:
 [1] ;  [2] ; ;  [1] ;  [3]
  1. Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India)
  2. (India)
  3. Nano-Research for Advanced Materials and Technologies, Bangalore 560040 (India)
Publication Date:
OSTI Identifier:
22345272
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 52; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CATALYSTS; DEPOSITION; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; EVAPORATION; FILMS; LIQUIDS; MICROSTRUCTURE; MONOCRYSTALS; NANOWIRES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; OXYGEN; PARTICLES; SILICON; SOLIDS; SPECTROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY