skip to main content

Title: Capacitance and conductance characterization of nano-ZnGa{sub 2}Te{sub 4}/n-Si diode

Graphical abstract: - Highlights: • XRD and DTA micrographs were used to study the structure of ZnGa{sub 2}Te{sub 4}. • C–V, G–V and R{sub s}–V of the diode characteristics have been analyzed for the first time. • Dielectric constant, dielectric loss, loss tangent and ac conductivity were determined. • The interfaces states were determined using conductance–voltage technique. • ZnGa{sub 2}Te{sub 4} is a good candidate for electronic device applications. - Abstract: Capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of p-ZnGa{sub 2}Te{sub 4}/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density N{sub ss} and series resistance R{sub s} were strongly frequency and temperature dependent. The interface states density N{sub ss} is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (V{sub bi}) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance R{sub s}, corrected capacitance C{sub ADJ}, corrected conductance G{sub ADJ}, dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ) and the AC conductivity (σ{sub ac}) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of N{sub ss} and R{submore » s} have a significant effect on the electrical characteristics of the studied diode.« less
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [2] ;  [5]
  1. Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt)
  2. Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt)
  3. (Egypt)
  4. (Saudi Arabia)
  5. Department of Physics, Faculty of Science, Firat University, Elazig (Turkey)
Publication Date:
OSTI Identifier:
22341847
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 49; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; DIFFERENTIAL THERMAL ANALYSIS; ELECTRIC POTENTIAL; PERMITTIVITY; SPECTROSCOPY; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION