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Title: Thickness effect on the structural and electrical properties of poly-SiGe films

Graphical abstract: - Highlights: • Stress and Young's modulus of poly-SiGe film are linked to the grain columnar structure. • The above properties remain unchanged for poly-SiGe films thicker than 40 nm. • The point of transition is close to the electron mean free path for SiGe. • Both the resistivity and Hall mobility follow a similar trend. - Abstract: As lateral dimensions of electromechanical devices are scaled down to length scales comparable to electron mean free paths, the influence of thickness effect on their properties becomes sine qua non. This paper presents a detailed study of thickness effect on the Young's modulus, residual stress, resistivity and Hall mobility of ultrathin poly-Si{sub 11}Ge{sub 89} films deposited by low pressure chemical vapour deposition. The Young's moduli for the films thicker than ∼40 nm are close to the bulk value (135 GPa) while those of the thinner films are much lower. The reduction in resistivity and subsequent improved Hall mobility as thickness increases are discussed in light of surface morphology which is evident from atomic microscopy images. The near constant values of Young's modulus, resistivity and Hall mobility for the films thicker than ∼40 nm are attributed to the columnar grain structuremore » as confirmed by the transmission electron microscopy images.« less
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [4] ; ;  [6]
  1. KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications, Riyadh (Saudi Arabia)
  2. (Belgium)
  3. (Saudi Arabia)
  4. imec, Kapeldreef 75, 3001 Leuven (Belgium)
  5. Fraunhofer-Institute for Material and Beam Technology, Winterbergstrasse 28, Dresden (Germany)
  6. King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia)
Publication Date:
OSTI Identifier:
22341823
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 49; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; ELASTICITY; ELECTRICAL PROPERTIES; GERMANIUM SILICIDES; MEAN FREE PATH; RESIDUAL STRESSES; SURFACES; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; YOUNG MODULUS