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Title: Fabrication and characterization of n-ZnO:Eu/p-ZnO:(Ag, N) homojunction by spray pyrolysis

Graphical abstract: In this paper authors report the fabrication of ZnO homojunction by the deposition of 2 at.% Eu doped ZnO (n-ZnO:Eu) layer grown over the 4 at.% Ag–N dual acceptor doped ZnO (p-ZnO:(Ag, N)) layer by spray pyrolysis technique. The as-grown n-type and p-type ZnO films on glass substrates have been characterized by Hall measurements, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), UV–vis and luminescence spectroscopy techniques. Hall measurement shows that 4 at.% ZnO:(Ag, N) film exhibits p-type conductivity with high hole concentration of 2.17 × 10{sup 18} cm{sup −3} and n-type conductivity is observed in the ZnO:Eu film. The current–voltage characteristics measured from the two-layer structure show typical rectifying characteristics of p–n homojunction with a low turn on voltage of about 1.85 V. I–V characteristics of the n-ZnO:Eu/p-ZnO:(Ag, N) homojunction. - Highlights: • The n-ZnO:Eu/p-ZnO:(Ag, N) homojunction is fabricated and characterized. • Low resistive and stable p-type ZnO films are achieved by dual acceptor-doping. • Homojunction with best dual-doped ZnO film shows good rectifying characteristics. • The fabricated ZnO homojunction is suitable for optoelectronic devices. - Abstract: In the present study, the authors report the fabrication of ZnO homojunction by the deposition of 2 at.% Eu doped ZnOmore » (n-ZnO:Eu) layer grown over the 4 at.% Ag–N dual acceptor doped ZnO (p-ZnO:(Ag, N)) layer by spray pyrolysis technique. The as-grown n-type and p-type ZnO films on glass substrates have been characterized by Hall measurements, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), UV–vis and luminescence spectroscopy techniques. Hall measurement shows that 4 at.% ZnO:(Ag, N) film exhibits p-type conductivity with high hole concentration of 2.17 × 10{sup 18} cm{sup −3} and n-type conductivity is observed in the ZnO:Eu film. The current–voltage characteristics measured from the two-layer structure show typical rectifying characteristics of p–n homojunction with a low turn on voltage of about 1.85 V.« less
Authors:
;
Publication Date:
OSTI Identifier:
22341818
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 49; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FABRICATION; LUMINESCENCE; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PYROLYSIS; SPECTROSCOPY; SPRAYS; SUBSTRATES; SYNTHESIS; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES