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Title: Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H{sup −}) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors

Graphical abstract: - Abstract: Here we propose a carrier transport mechanism for low energy H{sup −} ions implanted InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results obtained. Dark current density suppression of up to four orders was observed in the implanted quantum dot infrared photodetectors, which further demonstrates that they are effectively operational. We concentrated on determining how defect-related material and structural changes attributed to implantation helped in dark current density reduction for InAs/GaAs quantum dot infrared photodetectors. This is the first study to report the electrical carrier transport mechanism of H{sup −} ion-implanted InAs/GaAs quantum dot infrared photodetectors.
Authors:
;  [1] ;  [2] ; ; ;  [3] ;  [1]
  1. Centre for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra (India)
  2. Department of Electronics and Communication, S. V. National Institute of Technology, Surat 395007 (India)
  3. Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085, Maharashtra (India)
Publication Date:
OSTI Identifier:
22341728
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 48; Journal Issue: 8; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTRICAL PROPERTIES; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LIGHT IONS; OPTICAL PROPERTIES; PHOTODETECTORS; QUANTUM DOTS; QUATERNARY ALLOY SYSTEMS