Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)
- Chongqing Key Lab for Advanced Materials and Clean Energies of Techonologies Dean, Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing (China)
- Research Center for Materials Back Casting Technology (MBT Center), Nagoya University, Nagoya 464-8603 (Japan)
In this work, the self-assembled BaTiO{sub 3} nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58–70, better reliability and stability over various polycrystalline BaTiO{sub 3} nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details. - Graphical abstract: This work describes a novel resistive switching memory cell based on self-assembled BaTiO{sub 3} nanocubes. - Highlights: • BaTiO{sub 3} nanocubes were prepared by one step facile hydrothermal method. • Self-assembled BaTiO{sub 3} nanocubes thin films were obtained by drop-coating approach. • The BaTiO{sub 3} nanocubes show excellent resistive switching properties for memory applications.
- OSTI ID:
- 22334241
- Journal Information:
- Journal of Solid State Chemistry, Vol. 214; Conference: 7. international conference on materials for advanced technologies, Singapore (Singapore), 30 Jun - 5 Jul 2013; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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