skip to main content

Title: Efficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area

Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50 μm square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10 GHz at various applied reverse biases and optical intensities to explore the effects of photo-generated carrier screening on modulation bandwidth. Last, the bandwidth dependence on applied reverse bias and optical intensity is simulated as a means to quantify average carrier velocities in nanowire material systems.
Authors:
; ; ; ;  [1]
  1. Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States)
Publication Date:
OSTI Identifier:
22325117
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CAPACITANCE; CARRIERS; EFFICIENCY; ELECTRIC CONTACTS; GALLIUM ARSENIDES; INDIUM OXIDES; MODULATION; NANOWIRES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SIMULATION; TIN ADDITIONS