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Title: Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaning method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.
Authors:
; ;  [1]
  1. Hitachi, Ltd., Central Research Laboratory, 1-280, Higashi-Koigakubo, Kokubunji, Tokyo 185-8601 (Japan)
Publication Date:
OSTI Identifier:
22320338
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 6; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON CHLORIDES; BORON OXIDES; CHEMICAL REACTIONS; CHLORINE; ETCHING; FLUORINE; FLUOROFORM; FOURIER TRANSFORM SPECTROMETERS; PLASMA; QUARTZ; RADICALS; RESIDUES; SILICON COMPOUNDS; TITANIUM