skip to main content

SciTech ConnectSciTech Connect

Title: Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.
Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)
Publication Date:
OSTI Identifier:
22318098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; HYDROGEN COMPOUNDS; INDIUM NITRIDES; OPTICAL EQUIPMENT; SILICON CARBIDES; X-RAY PHOTOELECTRON SPECTROSCOPY