Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

Journal Article · Mon Aug 11 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4892525· OSTI ID:22318098

Jing, Qiang; Wu, Guoguang; Zhang, Yuantao; Gao, Fubin; Cai, Xupu; Zhao, Yang; Li, Wancheng; Du, Guotong ^[1]

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1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.

• OSTI ID: 22318098
• Journal Information: Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
HYDROGEN COMPOUNDS
INDIUM NITRIDES
OPTICAL EQUIPMENT
SILICON CARBIDES
X-RAY PHOTOELECTRON SPECTROSCOPY