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Title: Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

We demonstrate reversible carrier density control across the Dirac point (Δn ∼ 10{sup 13 }cm{sup −2}) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [5]
  1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden)
  2. SP Technical Research Institute of Sweden, S-50115 Borås (Sweden)
  3. National Physical Laboratory, Teddington TW110LW (United Kingdom)
  4. (United Kingdom)
  5. Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22318097
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; CORONA DISCHARGES; EPITAXY; GRAPHENE; SEMICONDUCTOR MATERIALS; SILICON CARBIDES