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Title: Scalable control program for multiprecursor flow-type atomic layer deposition system

The authors report the development and implementation of a scalable control program to control flow type atomic layer deposition (ALD) reactor with multiple precursor delivery lines. The program logic is written and tested in LABVIEW environment to control ALD reactor with four precursor delivery lines to deposit up to four layers of different materials in cyclic manner. The programming logic is conceived such that to facilitate scale up for depositing more layers with multiple precursors and scale down for using single layer with any one precursor in the ALD reactor. The program takes precursor and oxidizer exposure and purging times as input and controls the sequential opening and closing of the valves to facilitate the complex ALD process in cyclic manner. The program could be used to deposit materials from any single line or in tandem with other lines in any combination and in any sequence.
Authors:
 [1] ;  [2]
  1. Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)
  2. Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 and Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)
Publication Date:
OSTI Identifier:
22318092
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; COMPUTERIZED SIMULATION; DEPOSITION; LAYERS; OXIDIZERS; PRECURSOR; SCALE CONTROL