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Title: Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials

This study comprehensively investigates the effect of ultraviolet (UV) curing time on the physical, electrical, and reliability characteristics of porous low-k materials. Following UV irradiation for various periods, the depth profiles of the chemical composition in the low-k dielectrics were homogeneous. Initially, the UV curing process preferentially removed porogen-related CH{sub x} groups and then modified Si-CH{sub 3} and cage Si-O bonds to form network Si-O bonds. The lowest dielectric constant (k value) was thus obtained at a UV curing time of 300 s. Additionally, UV irradiation made porogen-based low-k materials hydrophobic and to an extent that increased with UV curing time. With a short curing time (<300 s), porogen was not completely removed and the residues degraded reliability performance. A long curing time (>300 s) was associated with improved mechanical strength, electrical performance, and reliability of the low-k materials, but none of these increased linearly with UV curing time. Therefore, UV curing is necessary, but the process time must be optimized for porous low-k materials on back-end of line integration in 45 nm or below technology nodes.
Authors:
;  [1] ; ; ;  [2]
  1. Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, 545661 (China)
  2. Department of Materials Science and Engineering, National Chiao-Tung University, Hsin-Chu, 30050, Taiwan (China)
Publication Date:
OSTI Identifier:
22318078
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 6; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; CURING; DIELECTRIC MATERIALS; METHYL RADICALS; OXYGEN; PERFORMANCE; PERMITTIVITY; POROUS MATERIALS; SILICON COMPOUNDS; ULTRAVIOLET RADIATION