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Title: Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.
Authors:
 [1] ;  [2] ;  [3] ; ;  [1] ; ; ;  [4] ;  [5]
  1. Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore)
  2. (Singapore)
  3. (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
  4. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
  5. Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 and Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)
Publication Date:
OSTI Identifier:
22318074
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 6; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON DIFFRACTION; GAS FLOW; HALL EFFECT; HYDROGEN; PHOSPHORUS HYDRIDES; POLYCRYSTALS; SCANNING TUNNELING MICROSCOPY; SILANES; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY