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Title: Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Translucent, Inc., 952 Commercial St., Palo Alto, California 94303 (United States)
  2. Institute of Applied Research, Vilnius University, Sauletekio al. 10, LT-10223 Vilnius (Lithuania)
  3. Department of Physics, The University of Texas at Austin, 2515 Speedway, C1600, Austin, Texas 78712 (United States)
Publication Date:
OSTI Identifier:
22318067
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 4; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; GADOLINIUM OXIDES; GALLIUM NITRIDES; GERMANIUM; MOLECULAR BEAM EPITAXY; ORGANOMETALLIC COMPOUNDS; RARE EARTHS; SEMICONDUCTOR MATERIALS; SILICON