skip to main content

Title: High density and taper-free boron doped Si{sub 1−x}Ge{sub x} nanowire via two-step growth process

The authors study Au catalyzed chemical vapor growth of Si{sub 1−x}Ge{sub x} alloyed nanowires in the presence of diborane, serving as a dopant precursor. Our experiments reveal that introduction of diborane has a significant effect on doping and morphology. Boron exposure poisons the Au catalyst surface, suppresses catalyst activity, and causes significantly tapered wires, as a result of conformal growth. The authors develop here a two-step method to obtain high density and taper-free boron doped Si{sub 1−x}Ge{sub x} alloy nanowires. The two-step process consists of: (1) growth of a small undoped Si{sub 1−x}Ge{sub x} section and (2) introduction of diborane to form a boron doped Si{sub 1−x}Ge{sub x} section. The catalyst preparation step remarkably influences wire yield, quality and morphology. The authors show that dopant-ratio influences wire resistivity and morphology. Resistivity for high boron doped Si{sub 1−x}Ge{sub x} nanowire is 6 mΩ-cm. Four probe measurements show that it is possible to dope Si{sub 1−x}Ge{sub x} alloy nanowires with diborane.
Authors:
; ; ;  [1] ;  [2]
  1. University of Grenoble Alpes LTM, F-38000 Grenoble, France and CNRS LTM, UMR-5129, F-38000 Grenoble (France)
  2. CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
Publication Date:
OSTI Identifier:
22318064
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 4; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 42 ENGINEERING; ALLOYS; BORON; CATALYSTS; DOPED MATERIALS; MORPHOLOGY; NANOSTRUCTURES; SURFACES