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Title: Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.
Authors:
; ; ;  [1]
  1. Nano Research Group, Electronics and Computer Science, Faculty of Physical and Applied Sciences, University of Southampton, Southampton SO17 1BJ (United Kingdom)
Publication Date:
OSTI Identifier:
22318048
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 4; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; CARBON FLUORIDES; CHROMIUM; ETCHING; OXYGEN; PLASMA; SOLID STATE LASERS; TANTALUM OXIDES; WAVEGUIDES