High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

Burke, Micheal; Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.

doi:10.1116/1.4891319

Title: High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

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Abstract

The authors report on the structural and electrical properties of TiN/Al{sub 2}O{sub 3}/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm{sup 2} and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm{sup 2} at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

Authors:: Burke, Micheal; Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.

Publication Date:: Thu Jan 01 00:00:00 EST 2015

OSTI Identifier:: 22318046

Resource Type:: Journal Article

Journal Name:: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

Additional Journal Information:: Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CAPACITANCE; DEPOSITION; ELECTRIC CONTACTS; LEAKAGE CURRENT; QUALITY FACTOR; TITANIUM NITRIDES

Citation Formats


                    Burke, Micheal, Blake, Alan, Djara, Vladimir, O'Connell, Dan, Povey, Ian M., Cherkaoui, Karim, Monaghan, Scott, Scully, Jim, Murphy, Richard, Hurley, Paul K., Pemble, Martyn E., and Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie. High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition.  United States: N. p., 2015. 
        Web.  doi:10.1116/1.4891319.

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                    Burke, Micheal, Blake, Alan, Djara, Vladimir, O'Connell, Dan, Povey, Ian M., Cherkaoui, Karim, Monaghan, Scott, Scully, Jim, Murphy, Richard, Hurley, Paul K., Pemble, Martyn E., & Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie. High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition.  United States.  https://doi.org/10.1116/1.4891319

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                    Burke, Micheal, Blake, Alan, Djara, Vladimir, O'Connell, Dan, Povey, Ian M., Cherkaoui, Karim, Monaghan, Scott, Scully, Jim, Murphy, Richard, Hurley, Paul K., Pemble, Martyn E., and Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie. 2015.  
        "High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition".  United States.  https://doi.org/10.1116/1.4891319.

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@article{osti_22318046,

  title        = {High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition},

  author       = {Burke, Micheal and Blake, Alan and Djara, Vladimir and O'Connell, Dan and Povey, Ian M. and Cherkaoui, Karim and Monaghan, Scott and Scully, Jim and Murphy, Richard and Hurley, Paul K. and Pemble, Martyn E. and Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie},

  abstractNote = {The authors report on the structural and electrical properties of TiN/Al{sub 2}O{sub 3}/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm{sup 2} and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm{sup 2} at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.},

  doi          = {10.1116/1.4891319},

  url          = {https://www.osti.gov/biblio/22318046},
  journal      = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},

  issn         = {0734-2101},

  number       = 1,

  volume       = 33,

  place        = {United States},

  year         = {Thu Jan 01 00:00:00 EST 2015},

  month        = {Thu Jan 01 00:00:00 EST 2015}

}

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