skip to main content

SciTech ConnectSciTech Connect

Title: Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence

Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (Li{sub x}Al{sub y}O{sub z}) thin films. In addition to LiB electrolyte applications, Li{sub x}Al{sub y}O{sub z} is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The Li{sub x}Al{sub y}O{sub z} films were deposited employing trimethylaluminum-O{sub 3} and lithium tert-butoxide-H{sub 2}O for Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al{sub 2}O{sub 3} andmore » Li{sub 2}O/LiOH, all the studied ALD Li{sub x}Al{sub y}O{sub z} films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic β-LiAlO{sub 2} phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers.« less
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Centre for Materials Science and Nanotechnology (SMN), Department of Chemistry, University of Oslo, P.O. Box 1126 Blindern, NO-0318 Oslo (Norway)
  2. Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, Oregon 97124 (United States)
  3. Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä (Finland)
Publication Date:
OSTI Identifier:
22318044
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ALUMINIUM OXIDES; DEPOSITION; DIFFUSION BARRIERS; ELECTRIC BATTERIES; LITHIUM; LITHIUM HYDROXIDES; LITHIUM IONS; LITHIUM OXIDES; NANOELECTRONICS; PERMITTIVITY; THIN FILMS