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Title: Synthesis of copper nitride films doped with Fe, Co, or Ni by reactive magnetron sputtering

Copper nitride (Cu{sub 3}N) and Fe-, Co-, and Ni-doped Cu{sub 3}N films were prepared by reactive magnetron sputtering. The films were deposited on silicon substrates at room temperature using pure Cu target and metal chips. The molar ratio of Cu to N atoms in the as-prepared Cu{sub 3}N film was 2.7:1, which is comparable with the stoichiometry ratio 3:1. X-ray diffraction measurements showed that the films were composed of Cu{sub 3}N crystallites with anti-ReO{sub 3} structure and adopted different preferred orientations. The reflectance of the four samples decreased in the wavelength range of 400–830 nm, but increased rapidly within wavelength range of 830–1200 nm. Compared with the Cu{sub 3}N films, the resistivity of the doped Cu{sub 3}N films decreased by three orders of magnitude. These changes have great application potential in optical and electrical devices based on Cu{sub 3}N films.
Authors:
 [1] ; ; ; ; ; ; ;  [2]
  1. School of Optoelectronics Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China)
  2. School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China)
Publication Date:
OSTI Identifier:
22318041
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 5; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT; COPPER; COPPER NITRIDES; DOPED MATERIALS; FILMS; IRON; MAGNETRONS; NICKEL; RHENIUM OXIDES; SILICON; SPUTTERING; X-RAY DIFFRACTION