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Title: Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells

This theoretical work analyzes the photovoltaic effect in non-polar InGaN/GaN solar cells. Our electronic transport model considers quantum behaviors related to confinement, tunneling, electron-phonon, and electron-photon scatterings. Based on this model, we compare a multiple quantum wells cell with its thick-layer counterpart. We show that the structure of multiple quantum wells is a promising design providing better compromise between photon-absorption and electronic transport. This balance is necessary since these two phenomena are shown to be antagonist in nanostructure based solar cells. In these devices, we also show that phonon absorption increases the short-circuit current, while phonon emission reduces the open-circuit voltage.
Authors:
; ;  [1]
  1. Aix Marseille Univ, CNRS, IM2NP UMR 7334, 13384 Marseille (France)
Publication Date:
OSTI Identifier:
22318030
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM NITRIDES; INDIUM COMPOUNDS; PHONONS; PHOTON-ELECTRON COLLISIONS; PHOTON-ELECTRON INTERACTIONS; PHOTOVOLTAIC EFFECT; QUANTUM WELLS; SOLAR CELLS; TRANSPORT THEORY; TUNNEL EFFECT