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Title: Metallic to hopping conduction transition in Ta{sub 2}O{sub 5−x}/TaO{sub y} resistive switching device

In this Letter, a comprehensive analysis of how the metallic behavior transition to hopping was presented by studying the transport mechanisms of low resistance states (LRS) in Ta{sub 2}O{sub 5−x}/TaO{sub y} resistive switching devices at very low temperatures. Three types of conduction behaviors were reported through temperature-dependent measurements ranging from 5 K to 250 K. Memory cells at low LRS show metallic behavior due to the formation of metallic filament. The temperature dependence of resistance at medium LRS exhibits an interesting phenomenon that a positive temperature coefficient transfers into a negative one at temperature of 20 K. Detailed analysis reveals that this phenomenon is caused by the coexistence of extended and localized states, with metallic conduction at higher temperatures and variable-range hopping at lower temperatures. Carrier transport at high LRS is dominated by electrons hopping conduction with nearest-neighboring hopping conduction changing into variable-range hopping as temperature decreases.
Authors:
; ; ;  [1] ; ;  [1] ;  [2]
  1. Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)
  2. (TNList), Beijing 100084 (China)
Publication Date:
OSTI Identifier:
22318027
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGED-PARTICLE TRANSPORT; ELECTRICAL PROPERTIES; FILAMENTS; METALS; SWITCHES; TANTALUM OXIDES