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Title: Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ∼10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of <100 ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.
Authors:
; ; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)
  2. Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)
Publication Date:
OSTI Identifier:
22318023
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC PULSES; INDIUM COMPOUNDS; QUANTIZATION; SILICON OXIDES; SILVER; TIN OXIDES