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Title: Induced electronic anisotropy in bismuth thin films

We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.
Authors:
 [1] ; ;  [2] ; ;  [3] ;  [4] ;  [5] ;  [1] ;  [6]
  1. Research Laboratory of Electronics, MIT, Cambridge, Massachusetts 02139 (United States)
  2. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467 (United States)
  3. Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States)
  4. Department of Nuclear Science and Engineering, MIT, Cambridge, Massachusetts 02139 (United States)
  5. Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139 (United States)
  6. (United States)
Publication Date:
OSTI Identifier:
22318015
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY; BISMUTH; CRYSTALLOGRAPHY; MAGNETORESISTANCE; POLYCRYSTALS; THIN FILMS