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Title: Thickness dependence of the charge-density-wave transition temperature in VSe{sub 2}

A set of three-dimensional charge-density-wave (3D CDW) VSe{sub 2} nano-flakes with different thicknesses were obtained by the scotch tape-based micro-mechanical exfoliation method. Resistivity measurements showed that the 3D CDW transition temperature T{sub p} decreases systematically from 105 K in bulk to 81.8 K in the 11.6 nm thick flake. The Hall resistivity ρ{sub xy} of all the flakes showed a linear dependent behavior against the magnetic field with a residual electron concentration of the order of ∼10{sup 21} cm{sup −3} at 5 K. The electron concentration n increases slightly as the thickness d decreases, possibly due to the CDW gap is reduced with the decrease of the thickness.
Authors:
; ; ; ; ; ; ; ; ;  [1] ; ;  [2]
  1. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui (China)
  2. Institute of Solid State Physics, Chinese Academy of Sciences, Heifei 230031, Anhui (China)
Publication Date:
OSTI Identifier:
22318013
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE DENSITY; MAGNETIC FIELDS; NANOSTRUCTURES; TRANSITION TEMPERATURE; VANADIUM SELENIDES