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Title: Influence of anharmonic phonon decay on self-heating in Si nanowire transistors

Anharmonic phonon-phonon scattering is incorporated into an electro-thermal quantum transport approach based on the nonequilibrium Green's function formalism. Electron-phonon and phonon-phonon interactions are taken into account through scattering self-energies solved in the self-consistent Born approximation. While studying self-heating effects in ultra-scaled Si nanowire transistors, it is found that the phonon decay process softens the artificial accumulation of high energy phonons caused by electron relaxations close to the drain region. This leads to an increase of the device current in the ON-state and a reduction of the effective lattice temperature.
Authors:
;  [1]
  1. Integrated Systems Laboratory, ETH Zürich, Gloriastr. 35, 8092 Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22318002
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORN APPROXIMATION; ELECTRONS; GREEN FUNCTION; NANOSTRUCTURES; PARTICLE DECAY; PHONONS; SILICON; TRANSISTORS