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Title: Optimizing biased semiconductor superlattices for terahertz amplification

Over the past 15 yr or more, researchers have been trying to achieve gain for electromagnetic fields in the terahertz frequency region using biased semiconductor superlattices, but with little success. In this work, we employ our model of the excitonic states in biased GaAs/Al{sub 0.3}Ga{sub 0.7}As semiconductor superlattices to find the optimal structures for amplification of terahertz radiation. In particular, we determine the optimum well width, barrier width, and bias field for terahertz fields with frequencies ranging from 1 to 4 terahertz. We find that gain coefficients on the order of 40 cm{sup −1} should be achievable over most of this frequency range.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049 (China)
  2. (China)
  3. Electronic Materials Research Laboratory–Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049 (China)
  4. Department of Physics, Engineering Physics and Astronomy, Queen's University, Kingston, Ontario K7L 3N6 (Canada)
Publication Date:
OSTI Identifier:
22318001
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; ELECTROMAGNETIC FIELDS; GALLIUM ARSENIDES; OPTIMIZATION; SEMICONDUCTOR MATERIALS; SUPERLATTICES