Semiconductor-to-metal transition of Bi{sub 2}Se{sub 3} under high pressure
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012 (China)
- Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
Pressure-induced electrical transport properties of Bi{sub 2}Se{sub 3}, including Hall coefficient, carrier concentration, mobility, and electrical resistivity, have been investigated under pressure up to 29.8 GPa by in situ Hall-effect measurements. The results indicate that the structural and electronic phase transitions of Bi{sub 2}Se{sub 3} induce discontinuous changes in these electrical parameters. The significant anomaly in Hall coefficient at 5 GPa reveals an electronic topological transition deriving from the topological change of the band extremum (Van Hove singularity). Additionally, electrical resistivity measurements under variable temperatures show that the insulating state of Bi{sub 2}Se{sub 3} becomes increasingly stable with an increase of pressure below 9.7 GPa. But above 9.7 GPa, Bi{sub 2}Se{sub 3} enters into a fully metallic state. As the metallization occurs, the topological property of Bi{sub 2}Se{sub 3} disappears.
- OSTI ID:
- 22317995
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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