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Title: Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.
Authors:
; ; ; ; ; ; ; ; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. IMEC, Kapeldreef 75, 3001 Leuven (Belgium)
  2. Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054 (United States)
  3. (Belgium)
Publication Date:
OSTI Identifier:
22317994
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALKANES; AMMONIUM HYDROXIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALS; DISLOCATIONS; ETCHING; GALLIUM ARSENIDES; ORGANOMETALLIC COMPOUNDS; SILICON; TRANSMISSION ELECTRON MICROSCOPY