Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)
- IMEC, Kapeldreef 75, 3001 Leuven (Belgium)
- Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054 (United States)
High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.
- OSTI ID:
- 22317994
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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