Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

Journal Article · Mon Aug 11 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4892468· OSTI ID:22317994

Pena, V.; Merckling, C.; Waldron, N.; Collaert, N.; Caymax, M.; Vancoille, E.; Barla, K.; Thean, A.; Eyben, P. ^[1]; Date, L.; Bao, X.; Sanchez, E. ^[2]; Vandervorst, W. ^[1]

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1. IMEC, Kapeldreef 75, 3001 Leuven (Belgium)
2. Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054 (United States)

High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

• OSTI ID: 22317994
• Journal Information: Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKANES
AMMONIUM HYDROXIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALS
DISLOCATIONS
ETCHING
GALLIUM ARSENIDES
ORGANOMETALLIC COMPOUNDS
SILICON
TRANSMISSION ELECTRON MICROSCOPY