skip to main content

SciTech ConnectSciTech Connect

Title: Influence of the bonding front propagation on the wafer stack curvature

The influence of the dynamics of the direct wafer bonding process on the curvature of the final wafer stack is investigated. An analytical model for the final curvature of the bonded wafers is developed, as a function of the different load components acting during the bonding front propagation, using thin plate theory and considering a strain discontinuity locked at the bonding interface. Experimental profiles are measured for different bonding conditions and wafer thicknesses. A very good agreement with the model prediction is obtained and the influence of the thin air layer trapped in-between the two wafers is demonstrated. The proposed model contributes to further improvement of the bonding process, in particular, for the stacking of layers of electronic devices, which requires a high accuracy of wafer-to-wafer alignment and a very low distortion level.
Authors:
 [1] ;  [2] ;  [3] ; ;  [1] ;  [4] ;  [5]
  1. SOITEC—Parc Technologique des Fontaines, 38190 Bernin (France)
  2. (France)
  3. SIMaP—Grenoble-INP, 1340 rue de la Piscine, 38402 St. Martin d'Hères (France)
  4. Institute of Mechanics, Materials and Civil Engineering (iMMC), Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)
  5. Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)
Publication Date:
OSTI Identifier:
22317992
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BONDING; ELECTRONIC EQUIPMENT; LAYERS; STRAINS; TRAPPING