Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers

Journal Article · Sat Nov 01 00:00:00 EDT 2014 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4897377· OSTI ID:22317928

Liu, Peizhi; Li, Guoliang; Duscher, Gerd ^[1]; Sharma, Yogesh K.; Ahyi, Ayayi C.; Isaacs-Smith, Tamara; Williams, John R.; Dhar, Sarit ^[2]

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1. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996 (United States)
2. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

The SiC/SiO{sub 2} interface is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies have shown a correlation between the mobility and the transition layer width at the SiC/SiO{sub 2} interface. The authors investigated this interface with atomic resolution Z-contrast imaging and electron energy-loss spectroscopy, and discovered that this transition region was due to the roughness of the vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets deviating from the ideal off-axis cut plane. The authors conclude that this roughness is limiting the mobility in the channels of SiC MOSFETs.

• OSTI ID: 22317928
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 6; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON MOBILITY
ENERGY-LOSS SPECTROSCOPY
ROUGHNESS
SILICA
SILICON CARBIDES
SILICON OXIDES