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Title: Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers

The SiC/SiO{sub 2} interface is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies have shown a correlation between the mobility and the transition layer width at the SiC/SiO{sub 2} interface. The authors investigated this interface with atomic resolution Z-contrast imaging and electron energy-loss spectroscopy, and discovered that this transition region was due to the roughness of the vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets deviating from the ideal off-axis cut plane. The authors conclude that this roughness is limiting the mobility in the channels of SiC MOSFETs.
Authors:
; ;  [1] ; ; ; ; ;  [2]
  1. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996 (United States)
  2. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
Publication Date:
OSTI Identifier:
22317928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 6; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON MOBILITY; ENERGY-LOSS SPECTROSCOPY; ROUGHNESS; SILICA; SILICON CARBIDES; SILICON OXIDES