Mean transverse energy and response time measurements of GaInP based photocathodes
Journal Article
·
· Journal of Applied Physics
- Institute for Advanced Research, Nagoya University, Nagoya 464-8603 (Japan)
- High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan)
- Nagoya University Synchrotron Radiation Research Center, Nagoya 464-8603 (Japan)
- Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan)
GaInP, which has a wider band gap than GaAs, is introduced as a photocathode for energy recovery linac (ERL). The wide band gap of material is expected to reduce the heating effect in the thermal relaxation process after high energy excitation. GaInP photocathodes exhibited higher quantum efficiency than GaAs and low thermal emittance as the same as GaAs photocathodes under green laser light irradiation. A short picosecond electron pulse was also achieved with the GaInP photocathode under 532 nm pulse laser irradiation. These experimental results demonstrate that the GaInP photocathode is an important candidate for ERL.
- OSTI ID:
- 22314622
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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