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Title: Magnetic properties and interlayer coupling of epitaxial Co/Cu films on Si

Thin films of Co and Co/Cu/Co trilayers with wedged Cu interlayers were grown epitaxially on Cu buffer layers on hydrogen passivated Si(001) wafers. We find that single Co layers have a well-defined four-fold anisotropy but with smaller in-plane anisotropies than observed in Co grown on Cu crystals. Ruderman–Kittel–Kasuya–Yosida (RKKY) interlayer coupling is observed in one Co/Cu/Co sample which is the smoothest of the films as measured by atomic force microscopy. Some of the films also form a dot-like structure on the surface. Intermixing at elevated temperatures between the Cu buffer and Si limits the ability to form flat surfaces to promote RKKY coupling.
Authors:
; ; ; ; ;  [1]
  1. Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
Publication Date:
OSTI Identifier:
22314614
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTALS; EPITAXY; HYDROGEN; LAYERS; MAGNETIC PROPERTIES; SURFACES; THIN FILMS