Structure and electronic properties of mixed (a + c) dislocation cores in GaN
Abstract
Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.
- Authors:
-
- Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
- Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)
- Publication Date:
- OSTI Identifier:
- 22314606
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY FUNCTIONAL METHOD; DISLOCATIONS; EQUIPMENT; FILMS; GALLIUM NITRIDES; PERFORMANCE; RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY
Citation Formats
Horton, M. K., E-mail: m.horton11@imperial.ac.uk, Rhode, S. L., Moram, M. A., and Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS. Structure and electronic properties of mixed (a + c) dislocation cores in GaN. United States: N. p., 2014.
Web. doi:10.1063/1.4893030.
Horton, M. K., E-mail: m.horton11@imperial.ac.uk, Rhode, S. L., Moram, M. A., & Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS. Structure and electronic properties of mixed (a + c) dislocation cores in GaN. United States. https://doi.org/10.1063/1.4893030
Horton, M. K., E-mail: m.horton11@imperial.ac.uk, Rhode, S. L., Moram, M. A., and Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS. 2014.
"Structure and electronic properties of mixed (a + c) dislocation cores in GaN". United States. https://doi.org/10.1063/1.4893030.
@article{osti_22314606,
title = {Structure and electronic properties of mixed (a + c) dislocation cores in GaN},
author = {Horton, M. K., E-mail: m.horton11@imperial.ac.uk and Rhode, S. L. and Moram, M. A. and Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS},
abstractNote = {Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.},
doi = {10.1063/1.4893030},
url = {https://www.osti.gov/biblio/22314606},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 116,
place = {United States},
year = {Thu Aug 14 00:00:00 EDT 2014},
month = {Thu Aug 14 00:00:00 EDT 2014}
}
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