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Title: Structure and electronic properties of mixed (a + c) dislocation cores in GaN

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)
  2. Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
  3. (United Kingdom)
Publication Date:
OSTI Identifier:
22314606
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY FUNCTIONAL METHOD; DISLOCATIONS; EQUIPMENT; FILMS; GALLIUM NITRIDES; PERFORMANCE; RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY