Structure and electronic properties of mixed (a + c) dislocation cores in GaN
Journal Article
·
· Journal of Applied Physics
- Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
- Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)
Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.
- OSTI ID:
- 22314606
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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