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Title: Structural change upon annealing of amorphous GeSbTe grown on Si(111)

The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature.
Authors:
; ; ; ; ;  [1]
  1. Paul-Drude-Institut f√ľr Festk√∂rperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22314581
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DENSITY; DEPOSITS; FILMS; MOLECULAR BEAM EPITAXY; ORIENTATION; REFLECTIVITY; SUBSTRATES; THICKNESS; X RADIATION; X-RAY DIFFRACTION