Modeling direct interband tunneling. II. Lower-dimensional structures
Abstract
We investigate the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures. Through comparisons with k·p and tight-binding calculations and quantum transport simulations, we find that the primary correction is the change in effective band gap. For both constant fields and realistic tunnel field-effect transistors, dimensionally consistent band gap scaling of the Kane formula allows analytical and numerical device simulations to approximate non-equilibrium Green's function current characteristics without arbitrary fitting. This allows efficient first-order calibration of semiclassical models for interband tunneling in nanodevices.
- Authors:
-
- Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States)
- Publication Date:
- OSTI Identifier:
- 22314570
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CALIBRATION; COMPARATIVE EVALUATIONS; CORRECTIONS; CURRENTS; EQUIPMENT; FIELD EFFECT TRANSISTORS; HAMILTONIANS; NANOSTRUCTURES; SEMICLASSICAL APPROXIMATION; SIMULATION; TUNNEL EFFECT
Citation Formats
Pan, Andrew, Chui, Chi On, and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095. Modeling direct interband tunneling. II. Lower-dimensional structures. United States: N. p., 2014.
Web. doi:10.1063/1.4891528.
Pan, Andrew, Chui, Chi On, & California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095. Modeling direct interband tunneling. II. Lower-dimensional structures. United States. https://doi.org/10.1063/1.4891528
Pan, Andrew, Chui, Chi On, and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095. 2014.
"Modeling direct interband tunneling. II. Lower-dimensional structures". United States. https://doi.org/10.1063/1.4891528.
@article{osti_22314570,
title = {Modeling direct interband tunneling. II. Lower-dimensional structures},
author = {Pan, Andrew and Chui, Chi On and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095},
abstractNote = {We investigate the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures. Through comparisons with k·p and tight-binding calculations and quantum transport simulations, we find that the primary correction is the change in effective band gap. For both constant fields and realistic tunnel field-effect transistors, dimensionally consistent band gap scaling of the Kane formula allows analytical and numerical device simulations to approximate non-equilibrium Green's function current characteristics without arbitrary fitting. This allows efficient first-order calibration of semiclassical models for interband tunneling in nanodevices.},
doi = {10.1063/1.4891528},
url = {https://www.osti.gov/biblio/22314570},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 116,
place = {United States},
year = {Thu Aug 07 00:00:00 EDT 2014},
month = {Thu Aug 07 00:00:00 EDT 2014}
}