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Title: Modeling direct interband tunneling. II. Lower-dimensional structures

We investigate the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures. Through comparisons with k·p and tight-binding calculations and quantum transport simulations, we find that the primary correction is the change in effective band gap. For both constant fields and realistic tunnel field-effect transistors, dimensionally consistent band gap scaling of the Kane formula allows analytical and numerical device simulations to approximate non-equilibrium Green's function current characteristics without arbitrary fitting. This allows efficient first-order calibration of semiclassical models for interband tunneling in nanodevices.
Authors:
 [1] ;  [1] ;  [2]
  1. Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22314570
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CALIBRATION; COMPARATIVE EVALUATIONS; CORRECTIONS; CURRENTS; EQUIPMENT; FIELD EFFECT TRANSISTORS; HAMILTONIANS; NANOSTRUCTURES; SEMICLASSICAL APPROXIMATION; SIMULATION; TUNNEL EFFECT