Modeling direct interband tunneling. II. Lower-dimensional structures
- Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States)
We investigate the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures. Through comparisons with k·p and tight-binding calculations and quantum transport simulations, we find that the primary correction is the change in effective band gap. For both constant fields and realistic tunnel field-effect transistors, dimensionally consistent band gap scaling of the Kane formula allows analytical and numerical device simulations to approximate non-equilibrium Green's function current characteristics without arbitrary fitting. This allows efficient first-order calibration of semiclassical models for interband tunneling in nanodevices.
- OSTI ID:
- 22314570
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices
Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor